Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide-…

Since 2007, when Stanley Williams and his team at HP Labs constructed a nanoelectronic
device [1] showing certain fingerprints of a memristor, there has been a resurgence of …

… v v R i g s = - The equation governing the time evolution of the state … R R R off on D = - For
voltage control, ie u … In both (21) and (22), the index r indicates the reference time series, the …

… Ascoli and R. Tetzlaff are with the Institut für Grundlagen der Elektrotechnik und Elektronik,
Technische Universität Dresden, Dresden 01069, Germany (e-mail: alon.ascoli@tu-dresden.…

This paper investigates the origin of the threshold switching effect in NbO2. It is found that
the effect is independent of the metal-insulator-transition but can be explained by a trap-…

… Wolf, R. Tetzlaff, and F. Puffer are with the Institute of Applied Physics, Goethe University, …
Tetzlaff is a member of the Informationstechnische Gesellschaft and the German Society of …

… for the remainder of this manuscript is X = 478, where r is found to be equal to −16.514 Ω. …
As will be clarified shortly, the condition for stabilizing Q m is R s > −r | Q m , where r | Q m …

The use of the memristor as a programmable resistance permits the realization of memristor-based
analog circuits with flexible features. This work gains some insight on memristor-…

This paper presents a circuit-theoretic analysis of a NbO 2 -Mott memristor fabricated at
Hewlett-Packard Labs. It investigates mechanisms behind the origin of complexity based on local …

… the series resistor is such that R < −r|Q2 , and, … Tetzlaff, “Pattern formation in an M-CNN
structure utilizing a locally active NbOx memristor,” in Memristor Computing Systems, LO Chua, R…